Wenshuo Yue#, Teng Zhang#, Zhaokun Jing, Kai Wu, Yuxiang Yang, Zhen Yang, Yibo Lin, Yaoyu Tao, Bonan Yan*, Ru Huang and Yuchao Yang*, A Scalable Universal Ising Machine Based on Interaction-centric Storage and Compute-in-memory. Nature Electronics, 10.1038/s41928-024-01228-7, 2024.
Zhen Yang#, Wenshuo Yue#, Chang Liu, Yaoyu Tao, Pek Jun Tiw, Longhao Yan, Yuxiang Yang, Teng Zhang, Bingjie Dang, Keqin Liu, Xiaodong He, Yongqin Wu, Weihai Bu, Kai Zheng, Jin Kang, Ru Huang, and Yuchao Yang*, Fully hardware memristive neuromorphic computing enabled by the integration of trainable dendritic neurons and high-density RRAM chip. Advanced Functional Materials, 2405618, 2024.
Xulei Wu#, Bingjie Dang#, Teng Zhang, Xiulong Wu*, and Yuchao Yang*, Spatiotemporal Audio Feature Extraction with Dynamic Memristor-Based Time-Surface Neurons. Science Advances, 10, eadl2767, 2024.
Ke Yang#, Yanghao Wang#, Pek Jun Tiw, Chaoming Wang, Xiaolong Zou, Rui Yuan, Chang Liu, Ge Li, Chen Ge, Si Wu, Teng Zhang*, Ru Huang and Yuchao Yang*, High-order sensory processing nanocircuit based on coupled VO2 oscillators. Nature Communications, 15, 1693, 2024.
Chang Liu, Pek Jun Tiw, Teng Zhang, Yanghao Wang, Lei Cai, Rui Yuan, Zelun Pan, Wenshuo Yue, Yaoyu Tao* and Yuchao Yang*, VO2 memristor-based frequency converter with in-situ synthesize and mix for wireless internet-of-things. Nature Communications, 15, 1523, 2024.
2023
Junjie Wang#, Teng Zhang#, Shuang Liu, Yihe Liu, Yuancong Wu, Shaogang Hu, T. P. Chen, Yang Liu*, Yuchao Yang*, and Ru Huang, Design and implementation of a hybrid, ADC/DAC-free, input-sparsity-aware, precision reconfigurable RRAM processing-in-memory chip. Journal of Solid-State Circuits, DOI: 10.1109/JSSC.2023.3304174, 2023.
Longhao Yan, Qingyu Wu, Xi Li, Chenchen Xie, Xilin Zhou, Yuqi Li, Daijing Shi, Lianfeng Yu, Teng Zhang, Yaoyu Tao, Bonan Yan, Min Zhong, Zhitang Song*, Yuchao Yang*, and Ru Huang*, Neural Architecture Search with In-Memory Multiply–accumulate and In-Memory Rank Based on Coating Layer Optimized C-doped Ge2Sb2Te5 Phase Change Memory. Advanced Functional Materials, 2300458, 2023.
Rui Yuan#, Pek Jun Tiw#, Cai Lei, Zhiyu Yang, Chang Liu, Teng Zhang, Chen Ge, Ru Huang and Yuchao Yang*, A neuromorphic physiological signal processing system based on VO2 memristor for next-generation human-machine interface. Nature Communications, 14, 3695, 2023.
Shaochuan Chen, Teng Zhang, Stefan Tappertzhofen*, Yuchao Yang*, and Ilia Valov*, Electrochemical memristor-based artificial neurons and synapses – fundamentals, applications, and challenges. Advanced Materials, 2301924, 2023.
Zhen Yang, Teng Zhang*, Keqin Liu, Bingjie Dang, Liying Xu, Yuchao Yang*, and Ru Huang, Neuromorphic Artificial Vision Systems based on Reconfigurable Ion-modulated Memtransistors. Advanced Intelligent Systems, 2300026, 2023.
Yingming Lu and Yuchao Yang*, Memory augmented factorization for holographic representation. Nature Nanotechnology, 18(5), 442-443, 2023.
Lei Cai, Lianfeng Yu, Wenshuo Yue, Yihang Zhu, Zhiyu Yang, Yuqi Li, Yaoyu Tao*, and Yuchao Yang*, Integrated Memristor Network for Physiological Signal Processing. Advanced Electronic Materials, 2300021, 2023.
2022
Chang Liu, Yanghao Wang, Teng Zhang, Rui Yuan, and Yuchao Yang*, An attention mechanism based adaptive feedback computing component by neuromorphic ion gated MoS2 transistors. Advanced Electronic Materials, 2201060, 2022.
Keqin Liu, Teng Zhang, Bingjie Dang, Lin Bao, Liying Xu, Caidie Cheng, Zhen Yang, Ru Huang*, and Yuchao Yang*, An optoelectronic synapse based on α-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing. Nature Electronics, DOI: 10.1038/s41928-022-00847-2, 2022.
Bingjie Dang, Keqin Liu, Xulei Wu, Zhen Yang, Liying Xu, Yuchao Yang*, and Ru Huang*, One-phototransistor-one-memristor Array with High-linearity Light-tunable Weight for Optic Neuromorphic Computing. Advanced Materials, 2204844, 2022.
Zhaokun Jing, Bonan Yan*, Yuchao Yang*, and Ru Huang*, VSDCA: A Voltage Sensing Differential Column Architecture Based on 1T2R RRAM Array for Computing-in-Memory Accelerators. IEEE Transactions on Circuits and Systems I: Regular Papers, 69(10), 4028-4041, 2022.
Yuchao Yang* and Ilia Valov*, Rebooting Computing in Post Moore Era. Advanced Intelligent Systems, 4, 2200161, 2022.
Liying Xu, Jiadi Zhu, Bing Chen, Zhen Yang, Keqin Liu, Bingjie Dang, Teng Zhang, Yuchao Yang*, and Ru Huang*, A Distributed Nanocluster Based Multi-Agent Evolutionary Network System. Nature Communications, 13, 4698, 2022.
Rui Yuan, Qingxi Duan, Pek Jun Tiw, Ge Li, Zhuojian Xiao, Zhaokun Jing, Ke Yang, Chang Liu, Chen Ge, Ru Huang*, and Yuchao Yang*, A Calibratable Sensory Neuron Based on Epitaxial VO2 for Spike-based Neuromorphic Multisensory System. Nature Communications, 13, 3973, 2022.
Zhuojian Xiao, Bonan Yan, Teng Zhang, Ru Huang*, and Yuchao Yang*, Memristive Devices Based Hardware for Unlabeled Data Processing. Neuromorphic Computing and Engineering, 2, 022003, 2022.
Yongxin Wei, Qingxi Duan, Rui Yuan, Xiaobing Yan*, and Yuchao Yang*, Dropout neuronal unit with tunable probability based on NbOx stochastic memristor for efficient suppression of overfitting. Microelectronic Engineering, 259, 111778, 2022.
Suhas Kumar*, Xinxin Wang, John Paul Strachan, Yuchao Yang*, and Wei D. Lu*, Dynamical Memristors for Higher-Complexity Neuromorphic Computing. Nature Reviews Materials, https://doi.org/10.1038/s41578-022-00434-z, 2022.
Qingxi Duan, Teng Zhang, Chang Liu, Rui Yuan, Ge Li, Pek Jun Tiw, Ke Yang, Chen Ge, Yuchao Yang*, and Ru Huang, Artificial Multisensory Neuron with Fused Haptic and Temperature Perception for Multimodal In-Sensor Computing. Advanced Intelligent Systems, 2200039, 2022.
Keqin Liu, Bingjie Dang, Teng Zhang, Zhen Yang, Lin Bao, Liying Xu, Caidie Cheng, Ru Huang*, and
Yuchao Yang* Multilayer Reservoir Computing Based on Ferroelectric α-In2Se3
for Hierarchical Information Processing. Advanced Materials, 2108826, 2022.
2021
Zhaokun Jing, Yuchao Yang*, and Ru Huang*, Dual-Mode Dendritic Devices Enhanced Neural Network Based
on Electrolyte Gated Transistors. Semiconductor Science and Technology, 37, 024002, 2021.
Yingming Lu, Xi Li, Bonan Yan, Longhao Yan, Teng Zhang, Zhitang Song*, Ru Huang*, and Yuchao Yang*,
In-Memory Realization of Eligibility Traces Based on Conductance Drift of Phase Change Memory for
Energy-Efficient Reinforcement Learning. Advanced Materials, 2107811, 2021.
Longhao Yan, Xi Li, Yihang Zhu, Bonan Yan, Yingming Lu, Teng Zhang, Yuchao Yang*, Zhitang Song*, and
Ru Huang*, Uncertainty Quantification Based on Multilevel Conductance and Stochasticity of Heater
Size Dependent C-doped Ge2Sb2Te5 PCM Chip. IEDM Tech. Dig. 605-608,
2021.
Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, Jordi Sune, Anthony Joseph
Kenyon, Adnan Mehonic, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco
A. Villena, Enrique Miranda, Xu Jing, Francesca Campabadal, Mireia Gonzalez, Fernando Aguirre, Felix
Palumbo, Kaichen Zhu, Juan Baustista Roldan, Francesco Maria Puglisi, Luca Larcher, Tuo-Hung Hou,
Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wang, Yang Chai, Kin Leong Pey, Nagarajan
Raghavan, Salvador Duenas, Tao Wang, Qiangfei Xia, Sebastian Pazos, Standards for the
Characterization of Endurance in Resistive Switching Devices. ACS Nano DOI: 10.1021/acsnano.1c06980,
2021.
Xulei Wu,# Bingjie Dang,# Hong Wang, Xiulong Wu*, and Yuchao Yang*, Spike Enabled Audio Learning in
Multilevel Synaptic Memristor Array Based Spiking Neural Network. Advanced Intelligent Systems,
2100151, 2021.
Caidie Cheng,# Pek Jun Tiw,# Yimao Cai, Xiaoqin Yan*, Yuchao Yang*, and Ru Huang*, In-memory
computing with emerging nonvolatile memory devices. Science China Information Sciences, 64, 221402,
2021.
Ke Yang, J. Joshua Yang*, Ru Huang*, Yuchao Yang*, Nonlinearity in Memristors for Neuromorphic
Dynamic Systems. Small Science, 2100049, 2021.
Zhaokun Jing, and Yuchao Yang*, Artificial intelligence goes physical. Small Science 1(3), 2000065,
2021.
Yanghao Wang, Yuchao Yang*, Yue Hao*, Ru Huang*, Embracing the era of neuromorphic computing.
Journal of Semiconductors 42(1), 010301, 2021.
2020
Yingming Lu, Xi Li, Longhao Yan, Teng Zhang, Yuchao Yang*, Zhitang Song*, and Ru Huang*，Accelerated
Local Training of CNNs by Optimized Direct Feedback Alignment Based on Stochasticity of 4 Mb C-doped
Ge2Sb2Te5 PCM Chip in 40 nm Node. IEEE International Electron
Devices Meeting, 797-800, 2020.
Bingjie Dang, Lan Ma, Longhao Yan, Saisai Wang, Keqin Liu, Liying Xu, Caidie Cheng, Momo Zhao,
Yuchao Yang*, Hong Wang*, Yue Hao, and Ru Huang*, Physically Transient Optic-Neural Synapse for
Secure In-Sensor Computing. IEEE Electron Device Letters, 41, 1641-1644, 2020.
Ke Yang, Qingxi Duan, Yanghao Wang, Teng Zhang, Yuchao Yang*, and Ru Huang*, Transiently chaotic
simulated annealing based on intrinsic nonlinearity of memristors for efficient solution of
optimization problems. Science Advances, 6, eaba9901, 2020.
Qingxi Duan, Zhaokun Jing, Xiaolong Zou, Yanghao Wang, Ke Yang, Teng Zhang, Si Wu, Ru Huang*, and
Yuchao Yang*, Spiking Neurons with Spatiotemporal Dynamics and Gain Modulation for Monolithically
Integrated Memristive Neural Networks. Nature Communications, 11, 3399, 2020.
Ilia Valov* and Yuchao Yang*, Memristors with alloyed electrodes. Nature Nanotechnology,
https://doi.org/10.1038/s41565-020-0702-9, 2020.
Yang Zhang, Zhongrui Wang, Jiadi Zhu, Yuchao Yang, Mingyi Rao, Wenhao Song, Ye Zhuo, Xumeng Zhang,
Menglin Cui, Linlin Shen, Ru Huang, and J. Joshua Yang*, Brain-inspired computing with memristors:
Challenges in devices, circuits and systems. Applied Physics Reviews, 7, 011308, 2020.
Jiadi Zhu,# Teng Zhang,# Yuchao Yang,* and Ru Huang,* A Comprehensive Review on Emerging Artificial
Neuromorphic Devices. Applied Physics Reviews, 7, 011312, 2020. (Editor's Pick)
Yanghao Wang, Liutao Yu, Si Wu, Ru Huang*, and Yuchao Yang*, Memristor Based Biologically Plausible
Memory Based on Discrete and Continuous Attractor Networks for Neuromorphic Systems. Advanced
Intelligent Systems, 2000001, 2020.
2019
Jingxian Li, Yuchao Yang,* Minghui Yin, Xinhao Sun, Lidong Li,* and Ru Huang,* Electrochemical and
thermodynamic processes of metal nanoclusters enabled biorealistic synapses and
leaky-integrate-and-fire neurons. Materials Horizons, 7, 71-81, 2020. (Front cover)
B. Dang, K. Liu, J. Zhu, L. Xu, T. Zhang, C. Cheng, H. Wang, Y. Yang, Y. Hao, and R. Huang,
"Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing", APL Materials 7,
071114 (2019).
B. Dang, J. Sun, T. Zhang, S. Wang, M. Zhao, K. Liu, L. Xu, J. Zhu, C. Cheng, L. Bao, Y. Yang, H.
Wang, Y. Hao, and R. Huang, "Physically Transient True Random Number Generators Based on Paired
Threshold Switches Enabling Monte Carlo Method Applications" IEEE Electron Device Letters (2019).
T. Zhang, K. Yang, X. Xu, Y. Cai, Y. Yang, and R. Huang, "Memristive Devices and Networks for
Brain‐Inspired Computing", physica status solidi (RRL)–Rapid Research Letters (2019).
X. Sun, T. Zhang, C. Cheng, X. Yan, Y. Cai, Y. Yang, and R. Huang, "A Memristor Based In-memory
Computing Network for Hamming Code Error Correction" IEEE Electron Device Letters (2019).
M. Aono, C. Baeumer, P. Bartlett, S. Brivio, G. Burr, M. Burriel, E. Carlos, S. Deswal, J.
Deuermeier, R. Dittmann, H. Du, E. Gale, S. Hambsch, H. Hilgenkamp, D. Ielmini, A. J Kenyon, A.
Kiazadeh, A. Kindsmüller, G. Kissling, I. Köymen, S. Menzel, D. Pla Asesio, T. Prodromakis, M.
Santamaria, A. Shluger, D. Thompson, I. Valov, W. Wang, R. Waser, R. S. Williams, D. Wrana, D.
Wouters, Y. Yang, A. Zaffora, "Valence change ReRAMs (VCM)-Experiments and modelling: general
discussion" Faraday discussions 213, 259-286 (2019).
E. Ambrosi, P. Bartlett, A. I. Berg, S. Brivio, G. Burr, S. Deswal, J. Deuermeier, M.-a. Haga, A.
Kiazadeh, G. Kissling, M. Kozicki, C. Foroutan-Nejad, E. Gale, Y. Gonzalez-Velo, A. Goossens, L.
Goux, T. Hasegawa, H. Hilgenkamp, R. Huang, S. Ibrahim, D. Ielmini, A. J. Kenyon, V. Kolosov, Y. Li,
S. Majumdar, G. Milano, T. Prodromakis, N. Raeishosseini, V. Rana, C. Ricciardi, M. Santamaria, A.
Shluger, I. Valov, R. Waser, R. S. Williams, D. Wouters, Y. Yang, and A. Zaffora, "Electrochemical
metallization ReRAMs (ECM)-Experiments and modelling: general discussion" Faraday discussions 213,
115-150 (2019).
K. Liu, L. Qin, X. Zhang, J. Zhu, X. Sun, K. Yang, Y. Cai, Y. Yang, and R. Huang, "Interfacial redox
processes in memristive devices based on valence change and electrochemical metallization" Faraday
Discussions 213, 41-52 (2019).
Q. Chen, Z. Wang, M. Yu, Y. Fang, Z. Yu, Y. Yang, Y. Cai, and R. Huang, "Thermal effect in
ultra-high density 3-dimensional vertical and horizontal RRAM array" Physica Scripta (2019).
L. Xu, R. Yuan, Z. Zhu, K. Liu, Z. Jing, Y. Cai, Y. Wang, Y. Yang, and R. Huang, "Memristor‐Based
Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications" Advanced Materials
Technologies, 1, 1900212 (2019).
Q. Chen, M. Lin, Z. Wang, X. Zhao, Y. Cai, Q. Liu, Y. Fang, Y. Yang, M. He, and Ru Huang, "Low Power
Parylene‐Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications"
Advanced Electronic Materials 5, 1800852 (2019).
A. I. Berg, S. Brivio, S. Brown, G. Burr, S. Deswal, J. Deuermeier, E. Gale, H. Hwang, D. Ielmini,
G. Indiveri, A. J. Kenyon, A. Kiazadeh, I. Köymen, M. Kozicki, Y. Li, D. Mannion, T. Prodromakis, C.
Ricciardi, S. Siegel, M. Speckbacher, I. Valov, W. Wang, R. S. Williams, D. Wouters, and Y. Yang,
"Synaptic and neuromorphic functions: general discussion", Faraday discussions 213, 553-578 (2019).
M. Lanza, H.‐S. P. Wong, E. Pop, D. Ielmini, D. Strukov, B. C. Regan, L. Larcher, M. A. Villena, J.
J. Yang, L. Goux, A. Belmonte, Y. Yang, F. M. Puglisi, J. Kang, B. Magyari‐Köpe, E. Yalon, A.
Kenyon, M. Buckwell, A. Mehonic, A. Shluger, H. Li, T.‐H. Hou, B. Hudec, D. Akinwande, R. Ge, S.
Ambrogio, J. B. Roldan, E. Miranda, J. Suñe, K. L. Pey, X. Wu, N. Raghavan, E. Wu, W. D. Lu, G.
Navarro, W. Zhang, H. Wu, R. Li, A. Holleitner, U. Wurstbauer, M. C. Lemme, M. Liu, S. Long, Q. Liu,
H. Lv, A. Padovani, P. Pavan, I. Valov, X. Jing, T. Han, K. Zhu, S. Chen, F. Hui, and Y. Shi,
"Recommended methods to study resistive switching devices" Advanced Electronic Materials 5, 1800143
(2019).
2018
Y. Ling, Z. Wang, Y. Fang, J. Kang, L. Wu, Y. Yang, Y. Cai, and R. Huang, "RTN impacts on RRAM-based
Nonvolatile logic circuit" 2018 14th IEEE International Conference on Solid-State and Integrated
Circuit Technology (ICSICT)
L. Wu, Z. Wang, Y. Fang, Z. Yu, J. Kang, Q. Chen, Y. Yang, Z. Ji, Y. Cai, and R. Huang, "Study on
High-Resistance State Instability of TaOx-Based RRAM" 2018 14th IEEE International Conference on
Solid-State and Integrated Circuit Technology (ICSICT)
L. Xu, L. Bao, T. Zhang, K. Yang, Y. Cai, Y. Yang, and R. Huang, "Nonvolatile memristor as a new
platform for non-von Neumann computing" 2018 14th IEEE International Conference on Solid-State and
Integrated Circuit Technology (ICSICT)
C. Cheng, Y. Li, T. Zhang, Y. Fang, J. Zhu, K. Liu, L. Xu, Y. Cai, X. Yan, Y. Yang, and R. Huang,
"Bipolar to unipolar mode transition and imitation of metaplasticity in oxide based memristors with
enhanced ionic conductivity" Journal of Applied Physics 124, 152103 (2018).
L. Bao, J. Kang, Y. Fang, Z. Yu, Z. Wang, Y. Yang, Y. Cai, and R. Huang, "Artificial Shape
Perception Retina Network Based on Tunable Memristive Neurons" Scientific reports 8, 13727 (2018).
Q. Chen, M. Lin, Y. Fang, Z. Wang, Y. Yang, J. Xu, Y. Cai, and R. Huang, " Integration of
biocompatible organic resistive memory and photoresistor for wearable image sensing application"
Science China Information Sciences 61, 060411 (2018).
Y. Fang, Z. Yu, Z. Wang, T. Zhang, Y. Yang, Y. Cai, and R. Huang, "Improvement of HfOx-Based RRAM
Device Variation by Inserting ALD TiN Buffer Layer" IEEE Electron Device Letters 39, 819-822 (2018).
Y. Yang, and R. Huang, "Probing memristive switching in nanoionic devices" Nature Electronics 1,
274-287 (2018).
J. Zhu, Y. Yang, R. Jia, Z. Liang, W. Zhu, Z. Ur Rehman, L. Bao, X. Zhang, Y. Cai, L. Song, and R.
Huang, "Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive
Dynamics" Advanced Materials 30, 1800195 (2018).
L. Bao, Y. Fang, Z. Wang, J. Kang, Y. Yang, J. Xu, Y. Cai, and R. Huang, "Study on microscopic model
of resistive switching in amorphous tantalum pentoxide from first-principle calculations" 2018 China
Semiconductor Technology International Conference (CSTIC), 1-3
J. Li, T. Zhang, Q. Duan, L. Li, Y. Yang, and R. Huang, "Engineering resistive switching behavior in
TaOx based memristive devices for non-von Neuman computing applications" Semiconductor Technology
International Conference (CSTIC), 2018 China, 1-3
Q. Duan, L. Xu, J. Zhu, X. Sun, Y. Yang, and R. Huang, "Resistive switching and synaptic plasticity
in HfO2-based memristors with single-layer and bilayer structures" 2018 China Semiconductor
Technology International Conference (CSTIC), 1-3
C. Wang, H. Wu, B. Gao, T. Zhang, Y. Yang, and H. Qian, "Conduction mechanisms, dynamics and
stability in ReRAMs" Microelectronic Engineering 187, 121-133 (2018).
2017
J. Kang, Z. Yu, L. Wu, Y. Fang, Z. Wang, Y. Cai, Z. Ji, J. Zhang, R. Wang, Y. Yang, and R. Huang,
"Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition" 2017
IEEE International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4
Y. Yang, Y. Takahashi, A. Tsurumaki-Fukuchi, M. Arita, M. Moors, M. Buckwell, A. Mehonic, A. Kenyon,
"Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting
filaments in memristive devices" Journal of Electroceramics 39, 73-93 (2017).
Y. Yang, "Memristors for Memory and Computing Applications" Information Storage System and
Technology, ISu4B. 1 (2017).
X. Lv, Y. Cai, Y. Yang, Z. Yu, Y. Fang, Z. Wang, L. Wu, J. Liu, W. Zhang, and R. Huang, "A neural
network circuit with associative learning and forgetting process based on memristor neuromorphic
device" 2017 IEEE 12th International Conference on ASIC (ASICON), 211-214
Q. Duan, T. Zhang, M. Yin, C. Cheng, L. Xu, Y. Yang, and R. Huang, "Switching dynamics and computing
applications of memristors: An overview" 2017 IEEE 12th International Conference on ASIC (ASICON),
144-147
T. Zhang, M. Yin, C. Xu, X. Lu, X. Sun, Y. Yang, R. Huang, " High-speed true random number
generation based on paired memristors for security electronics" Nanotechnology 28, 455202 (2017).
M. Lin, Q. Chen, Z. Wang, Y. Fang, J. Liu, Y. Yang, W. Wang, Y. Cai, and R. Huang, "Flexible Polymer
Device Based on Parylene-C with Memory and Temperature Sensing Functionalities" Polymers 9, 310
(2017).
Y. Yang, M. Yin, Z. Yu, Z. Wang, T. Zhang, Y. Cai, W. Lu, and R. Huang, "Multifunctional Nanoionic
Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In‐Memory Boolean Logic"
Advanced Electronic Materials 3, 1700032 (2017).
Y. Yang, X. Zhang, L. Qin, Q. Zeng, X. Qiu, and R. Huang, "Probing nanoscale oxygen ion motion in
memristive systems." Nature communications 8, 15173 (2017).
Y. Zhao, C. Wu, Q. Huang, C. Chen, J. Zhu, L. Guo, R. Jia, Z. Lv, Y. Yang, M. Li, and R. Huang, "A
Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over
5 Decades of Current and High Ratio" IEEE Electron Device Letters 38 , 540-543 (2017).
T. Zhang, M. Yin, X. Lu, Y. Cai, Y. Yang, and R. Huang, "Tolerance of intrinsic device variation in
fuzzy restricted Boltzmann machine network based on memristive nano-synapses" Nano Futures 1, 015003
(2017).
J. Li, Q. Duan, T. Zhang, M. Yin, X. Sun, Y. Cai, L. Li, Y. Yang, and R. Huang, "Tuning analog
resistive switching and plasticity in bilayer transition metal oxide based memristive synapses" RSC
Advances 7, 43132-43140 (2017).
2016
M. Yin, Y. Yang, Z. Wang, T. Zhang, Y. Fang, X. Yang, Y. Cai, and R. Huang, "TaOx based memristors
with recessed bottom electrodes and built-in ion concentration gradient as electronic synapses"2016
13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
Y. Yang, and W. Lu, "Progress in the Characterizations and Understanding of Conducting Filaments in
Resistive Switching Devices" IEEE Transactions on Nanotechnology 15, 465-472 (2016).
H. Liu, Q. Hua, R. Yu, Y. Yang, T. Zhang, Y. Zhang, and C. Pan, "A Bamboo‐Like GaN Microwire‐Based
Piezotronic Memristor" Advanced Functional Materials 26, 5307-5314 (2016).
M. Yu, Y. Fang, Z. Wang, G. Chen, Y. Pan, X. Yang, M. Yin, Y. Yang, M. Li, Y. Cai, and R. Huang,
"Encapsulation layer design and scalability in encapsulated vertical 3D RRAM" Nanotechnology 27,
205202 (2016).
X. Yang, Y. Fang, Z. Yu, Z. Wang, T. Zhang, M. Yin, M. Lin, Y. Yang, Y. Cai, and R. Huang,
"Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device"
Nanoscale 8, 18897-18904 (2016).
Z. Wang, M. Yin, T. Zhang, Y. Cai, Y. Wang, Y. Yang, and R. Huang, "Engineering incremental
resistive switching in TaO x based memristors for brain-inspired computing" Nanoscale 8, 14015-14022
(2016).
Before 2016
Y. Yang, B. Chen, and W. Lu, "Memristive Physically Evolving Networks Enabling the Emulation of
Heterosynaptic Plasticity" Advanced Materials 27, 7720-7727 (2015).
Y. Yang, P. Gao, L. Li, X. Pan, S. Tappertzhofen, S. Choi, R. Waser, I. Valov, and W. D. Lu
"Electrochemical dynamics of nanoscale metallic inclusions in dielectrics" Nature communications 5,
4232 (2014).
Y. Yang, J. Lee, S. Lee, C. H. Liu, Z. Zhong, and W. Lu, "Oxide Resistive Memory with Functionalized
Graphene as Built‐in Selector Element" Advanced Materials 26, 3693-3699 (2014).
Y. Yang, S. Choi, and W. Lu, "Oxide heterostructure resistive memory" Nano letters 13, 2908-2915
(2013).
Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, and W. Lu, "Observation of conducting filament growth in
nanoscale resistive memories" Nature communications 3, 732 (2012).
Y. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, "Fully room-temperature-fabricated nonvolatile
resistive memory for ultrafast and high-density memory application" Nano letters 9, 1636-1643
(2009).
Journal Covers
Advanced Intelligent Systems Vol. 4, 2022
Advanced Materials Vol. 30, 2018
Materials Horizons Vol.7, 2020
Physica Status Srrl Vol 13, 2019
Books
Yuchao Yang, Yasuo Takahashi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, M. Moors, M. Buckwell, A.
Mehonic, and A. J. Kenyon, Probing electrochemistry at the nanoscale: in situ TEM and STM
characterizations of conducting filaments in memristive devices, in Resistive Switching: Oxide
Materials, Mechanisms, Devices and Operations, Jennifer Rupp, Daniele Ielmini and Ilia Valov (eds.),
Springer, 2022.
Yuchao Yang*, Ke Yang and Ru Huang*, “Neuromorphic Devices and Networks Based on Memristors with
Ionic Dynamics”, in Handbook of Memristor Networks, Leon Chua, Georgios Sirakoulis, and Andrew
Adamatzky (eds.), Springer, 2018.
Yuchao Yang, Ting Chang and Wei Lu, “Memristive Devices: Switching Effects, Modeling, and
Applications” in Memristors and Memristive Systems, Ronald Tetzlaff (ed.), Springer, 2014.
Yuchao Yang, Wei Lu, “Resistive-Random Access Memory Based on Amorphous Films”, in Nonvolatile
Memories: Materials, Devices, and Applications, Tseung-Yuen Tseng and Simon M. Sze (eds.), American
Scientific Publishers, 2012.
Yuchao Yang，N. Wu，D. Ma，R. Huang，“Brain-inspired computing chip”，《Research on the Development Strategy of Chinese Artificial Intelligence 2.0》，Zhejiang University Press，2018.
Invited Talks
(Invited) "Memristor-based memory-computing integration technology", CNCC 2021, Forum on Data-Centric System Architecture (Online), Shenzhen, China, December 16-18, 2021.
(Invited) "Putting the Human Brain on Chips - Memristor-Based Brain-like Circuits and Chip Architecture", Tencent Expert Thinking Conference, Shenzhen, China, December 4, 2021.
(Invited) “On-chip inference and multimode perception based on memristive device elements”, 4th
International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2021), Tsukuba, Japan,
November 1-4, 2021.
(Invited) "Memristor-Based Brain-Inspired Computing System", Symposium on One-Dimensional Nanomaterials, Beijing, China, August 24-26, 2021.
(Invited) “Memristive Dynamics Based Hardware Primitives for Efficient Computing”, HKU EEE and IEEE
HK EDSSC, Hongkong, China, August 27, 2021.
(Invited) “Memristive Dynamics Based Hardware Primitives for Efficient Computing”, IEEE EDS Webinar,
IEEE Electron Devices Society, July 21, 2021.
(Invited) "Brain-like Computing: Status, Trends and Changes", 4th Workshop on Frontiers of Hybrid Augmented Intelligence, Xi'an, China, July 3-4, 2021.
(Invited) “Brain Inspired Hardware Primitives for Efficient Computing Applications”,
The 3rd China Conference on Computational and Cognitive Neuroscience （CCCN 2021）, Shenzhen, China , June, 12, 2021.
(Invited) “In-memory Computing Based on Intrinsic Dynamics in Emerging Nonvolatile Memories”, 3rd
International Memory Symposium, Hongkong, China, May 26-29, 2021.
(Short Course) “In-memory Computing Based on Emerging Nonvolatile Memories”, 2021 VLSI-TSA
Symposium, Taiwan, China, April 19-22, 2021.
(Invited) "Neuromorphic devices and brain-like smart chips" , 4th International Symposium on Bio, Organic & Nano Electronics
(ISBONE-2021), Nanjing, China, January 8-11, 2021.
(Invited) "Nonlinear Memristive Neural Networks", The First Young Scientists Forum, School of Physical Science and Technology, Wuhan University, Wuhan, China, November 28, 2020.
(Invited) "Nonlinear Memristive Neural Networks", Beijing Advanced Forum - The 1st Young Materials Scientist Forum, Beijing, China, November 23, 2020.
(Invited) "New principle devices and chips for brain-like intelligence", China Association for Science and Technology Young Scientists Forum, Beijing, China, November 12, 2020.
(Invited) "Nonlinear Memristive Neural Networks", National Electronic Information Young Scientist Forum and the 3rd Semiconductor Youth Academic Conference, Ningbo, China, October 30, 2020.
(Invited) "Nonlinear Memristive Neural Networks", Symposium on Emerging Oxide Functional Materials and Devices in the Greater Bay Area, Shenzhen, China, October 29, 2020.
(Invited) “Efficient Computing Based on Emerging Neuromorphic Devices”, 2020 MRS Fall Meeting,
November 27–December 4, 2020. (virtual meeting)
(Invited) “Transiently chaotic simulated annealing based on intrinsic nonlinearity of memristors for
efficient solution of optimization problems”, The 15th International Conference on Solid State and
Integrated Circuit Technology (ICSICT 2020), Kunming, China, Nov.3-6, 2020. (virtual meeting)
(Invited) “Spike encoding and processing in artificial elements for efficient computing
applications”, International Workshop on Future Semiconductor Technology 2020 (IWFST 2020), Seoul
(online), Korea, August 28, 2020.
(Invited) "Current Situation and Development Suggestions of Memristor-Based Neural Network Chips", National Natural Science Foundation of China Research Exchange Conference on New Generation Chips for Artificial Intelligence, Beijing (online), 4/7/2020.
(Invited) "Neuromorphic devices and brain-like intelligent systems", The 5th National Microelectronics Youth Science and Technology Forum, Hefei, Dec. 26–27, 2019.
(Invited) “Spike encoding and processing in artificial elements for efficient computing
applications”, 3rd IEEE International Workshop on Future Computing (IWOFC 2019): Neuromorphic
Engineering and Quantum Computing, Hangzhou, China, December 14–15, 2019.
(Invited) “Non-von Neumann Computing Based on Emerging Neuromorphic Devices”, Inaugural Chua
Memristor Institute Conference (ICMIC 2019): Theory, Device, and Applications, Wuhan, Nov. 11–14,
2019.
(Invited) “Non-von Neumann Computing Based on Emerging Neuromorphic Devices”, Nature Conference on
Neuromorphic Computing, Beijing, Oct. 28–30, 2019.
(Keynote) "Neuromorphic Devices and Brain-Inspired Computing", Computing the Future, Creating Convergence — IEEE Computer Magazine China Conference, Beijing, October 12, 2019.
(Invited) “Realization of Nanoscale Neuromorphic Memristor Array with Low Power Consumption”, 2019
13th IEEE International Conference on ASIC (ASICON), Chongqing, China, Oct. 29–Nov. 1, 2019.
(Invited) “Brain Inspired Nanoionic Devices and Networks for Efficient Computing”, 9th International
Conference on Electroceramics, Lausanne, Switzerland, Jul. 15–19, 2019.
(Keynote) “Artificial synapses enabling bio-inspired information processing”, International
Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2019, Dresden, Germany, Jul.
08–11, 2019.
(Invited) “Nanoionic Devices and Networks for Neuromorphic Computing”, NANO KOREA 2019, Ilsan,
Korea, July 3–5, 2019.
(Invited) "New principle neuromorphic devices for brain-like intelligence", The 2nd China Cognitive Computing and Hybrid Intelligence Academic Conference, Xi'an, China, September 21–22, 2019.
(Invited) "Neuromorphic Computing", Youth Frontier Forum of Chinese Institute of Electronics, Hefei, China, April 21, 2019.
(Invited) “Research on Neuromorphic Devices for Brain-like Intelligence”, Shuangqing Forum, Beijing, 4/12/2019–4/13/2019.
(Invited) “Brain Inspired Nanoionic Devices and Networks for Efficient Computing”, 2nd International
Workshop on Future Computing (IWOFC 2018): Devices and Systems for Neuromorphic Computing, Shenzhen,
China, December 17–18, 2018.
(Invited) "Development Status and Prospects of Brain-inspired Smart Chips", China IC Industry Promotion Conference (China IC Conference), Chongqing, China, November 8–9, 2018.
(Invited) “Interfacial redox processes in memristive devices based on valence change and
electrochemical metallization”, Faraday Discussions, Aachen, Germany, Oct. 15–17, 2018.
(Invited) “Nonvolatile memristor as a new platform for non-von Neumann computing”, International
Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2018, Qingdao, China, Oct 31-
Nov 3, 2018.
(Invited) “Manipulation of ionic transport properties for synaptic elements with rich
functionalities”, 2018 International Emergent Memory Symposium (IEMS-2018), Ji’an, Jiangxi, China,
Aug. 31 - Sept. 2, 2018.
(Invited) "Research on Novel Neuromorphic Devices Based on Nano-ion Gating", 2018 Annual Conference of Vacuum Society of China, Changchun, Jilin, China, August 16–19, 2018.
(Invited) “Emerging computing hardware for future artificial intelligence”, 2018 Sino-Dutch
International High Level Talent Forum, Beijing, China, Jul. 09-14, 2018.
(Invited) “Nanoionics Enabled Devices and Networks for Efficient Computing”, International
Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2018, Beijing, China, Jul. 03-05,
2018.
(Invited) “Brain-inspired Neuromorphic Devices and Networks as Future Intelligent Edge Computing
Platform”, MIT-Wanxiang Congress, Hangzhou, China, 3/22/2018.
(Invited) “Brain-inspired Neuromorphic Devices and Networks”,
The 2018 Academic Work Annual Meeting of the Chemistry and Materials Branch of the Youth Innovation Promotion Association of the Chinese Academy of Sciences and the 2nd International Youth Forum on Energy Chemistry and Materials, April 27, 2018, Ningbo.
(Invited) "Memristive Neuromorphic Devices", 2018 "Frontiers of Brain and Brain-like Computing" STARS Conference, Xishuangbanna, China, April 6–9, 2018.
(keynote) “Memristive Devices for Brain Inspired Computing”, The 2nd Youth Nano Forum 2017, October 30, 2017, Beijing.
(keynote) “Understanding and Engineering Memristors for Computing Applications”, International
Conference on Memristive Materials, Devices & Systems (MEMRISYS), Athens, Greece, Apr 03-06 2017.
(Invited) “Emulation of the human brain by nanodevices at different scales”, China Semiconductor
Technology International Conference (CSTIC) 2018, Shanghai, China, Mar. 11-12, 2018.
(Invited) “Switching Kinetics of Memristors by Nanoscale Characterization and Their Applications in
Neuromorphic Computing”, MRS Fall Meeting, Boston, MA, USA, Nov. 27 - 30, 2017.
(Invited) “Memristors for Memory and Computing Applications”, The International Photonics and
Optoelectronics Meeting (POEM) 2017, Wuhan, China, Nov 3-5, 2017.
(Invited) “Memristors for Emerging Memory and Computing Applications”, IEEE 12th International
Conference on ASIC (ASICON 2017), Guiyang, China, Oct. 25-28, 2017.
(Invited) “Memristive Devices: Understanding of Filament Growth Dynamics and Computing
Applications”, International Symposium of Memory Devices for Abundant Data Computing, Hongkong,
Sept. 22-24, 2017.
(Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, 1st International
Workshop on Future Computing (IWOFC 2017): Memristive Devices and Systems, Beijing, China, September
1-2, 2017
(Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, The XXVI
International Materials Research Congress (IMRC 2017), Cancun, Mexico, August 20-25, 2017
(Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, 3rd NANOMXCN:
Mexico-China Workshop on Nano Materials/Science/Technology, Cancun, Mexico, August 19 - 21, 2017
(Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese
Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017
(Invited) “Ion Transport in Memristive Oxides and Its Computing Applications”, China RRAM, Soochow,
China, Jun. 12-13, 2017.
(Invited) “Resistive switching dynamics and beyond”, IEEE 13th International Conference on
Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China, Oct 25-28 2016.
(Invited) “Characterizations and Understanding of Conducting Filaments in Resistive Switching
Devices”, 15th International Conference on Nanotechnology (IEEE Nano 2015), Rome, Italy, Jul 27-30
2015.
(Invited) “RRAM filament structure and growth dynamics”, China Semiconductor Technology
International Conference (CSTIC) 2014, Shanghai, China, Mar 16-17, 2014.
