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Journal Articles

2020

85. Bingjie Dang, Lan Ma, Longhao Yan, Saisai Wang, Keqin Liu, Liying Xu, Caidie Cheng, Momo Zhao, Yuchao Yang*, Hong Wang*, Yue Hao, and Ru Huang*, Physically Transient Optic-Neural Synapse for Secure In-Sensor Computing. IEEE Electron Device Letters, 41, 1641-1644, 2020.

84. Ke Yang, Qingxi Duan, Yanghao Wang, Teng Zhang, Yuchao Yang*, and Ru Huang*, Transiently chaotic simulated annealing based on intrinsic nonlinearity of memristors for efficient solution of optimization problems. Science Advances, 6, eaba9901, 2020.

83. Qingxi Duan, Zhaokun Jing, Xiaolong Zou, Yanghao Wang, Ke Yang, Teng Zhang, Si Wu, Ru Huang*, and Yuchao Yang*, Spiking Neurons with Spatiotemporal Dynamics and Gain Modulation for Monolithically Integrated Memristive Neural Networks. Nature Communications, 11, 3399, 2020.

82. Ilia Valov* and Yuchao Yang*, Memristors with alloyed electrodes. Nature Nanotechnology, https://doi.org/10.1038/s41565-020-0702-9, 2020.

81. Yang Zhang, Zhongrui Wang, Jiadi Zhu, Yuchao Yang, Mingyi Rao, Wenhao Song, Ye Zhuo, Xumeng Zhang, Menglin Cui, Linlin Shen, Ru Huang, and J. Joshua Yang*, Brain-inspired computing with memristors: Challenges in devices, circuits and systems. Applied Physics Reviews, 7, 011308, 2020.

80. Jiadi Zhu,# Teng Zhang,# Yuchao Yang,* and Ru Huang,* A Comprehensive Review on Emerging Artificial Neuromorphic Devices. Applied Physics Reviews, 7, 011312, 2020. (Editor's Pick)

79. Yanghao Wang, Liutao Yu, Si Wu, Ru Huang*, and Yuchao Yang*, Memristor Based Biologically Plausible Memory Based on Discrete and Continuous Attractor Networks for Neuromorphic Systems. Advanced Intelligent Systems, 2000001, 2020.

2019

78. Jingxian Li, Yuchao Yang,* Minghui Yin, Xinhao Sun, Lidong Li,* and Ru Huang,* Electrochemical and thermodynamic processes of metal nanoclusters enabled biorealistic synapses and leaky-integrate-and-fire neurons. Materials Horizons, 7, 71-81, 2020. (Front cover)

77. B. Dang, K. Liu, J. Zhu, L. Xu, T. Zhang, C. Cheng, H. Wang, Y. Yang, Y. Hao, and R. Huang, "Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing", APL Materials 7, 071114 (2019).

76. B. Dang, J. Sun, T. Zhang, S. Wang, M. Zhao, K. Liu, L. Xu, J. Zhu, C. Cheng, L. Bao, Y. Yang, H. Wang, Y. Hao, and R. Huang, "Physically Transient True Random Number Generators Based on Paired Threshold Switches Enabling Monte Carlo Method Applications" IEEE Electron Device Letters (2019).

75. T. Zhang, K. Yang, X. Xu, Y. Cai, Y. Yang, and R. Huang, "Memristive Devices and Networks for Brain‐Inspired Computing", physica status solidi (RRL)–Rapid Research Letters (2019).

74. X. Sun, T. Zhang, C. Cheng, X. Yan, Y. Cai, Y. Yang, and R. Huang, "A Memristor Based In-memory Computing Network for Hamming Code Error Correction" IEEE Electron Device Letters (2019).

73. M. Aono, C. Baeumer, P. Bartlett, S. Brivio, G. Burr, M. Burriel, E. Carlos, S. Deswal, J. Deuermeier, R. Dittmann, H. Du, E. Gale, S. Hambsch, H. Hilgenkamp, D. Ielmini, A. J Kenyon, A. Kiazadeh, A. Kindsmüller, G. Kissling, I. Köymen, S. Menzel, D. Pla Asesio, T. Prodromakis, M. Santamaria, A. Shluger, D. Thompson, I. Valov, W. Wang, R. Waser, R. S. Williams, D. Wrana, D. Wouters, Y. Yang, A. Zaffora, "Valence change ReRAMs (VCM)-Experiments and modelling: general discussion" Faraday discussions 213, 259-286 (2019).

72. E. Ambrosi, P. Bartlett, A. I. Berg, S. Brivio, G. Burr, S. Deswal, J. Deuermeier, M.-a. Haga, A. Kiazadeh, G. Kissling, M. Kozicki, C. Foroutan-Nejad, E. Gale, Y. Gonzalez-Velo, A. Goossens, L. Goux, T. Hasegawa, H. Hilgenkamp, R. Huang, S. Ibrahim, D. Ielmini, A. J. Kenyon, V. Kolosov, Y. Li, S. Majumdar, G. Milano, T. Prodromakis, N. Raeishosseini, V. Rana, C. Ricciardi, M. Santamaria, A. Shluger, I. Valov, R. Waser, R. S. Williams, D. Wouters, Y. Yang, and A. Zaffora, "Electrochemical metallization ReRAMs (ECM)-Experiments and modelling: general discussion" Faraday discussions 213, 115-150 (2019).

71. K. Liu, L. Qin, X. Zhang, J. Zhu, X. Sun, K. Yang, Y. Cai, Y. Yang, and R. Huang, "Interfacial redox processes in memristive devices based on valence change and electrochemical metallization" Faraday Discussions 213, 41-52 (2019).

70. Q. Chen, Z. Wang, M. Yu, Y. Fang, Z. Yu, Y. Yang, Y. Cai, and R. Huang, "Thermal effect in ultra-high density 3-dimensional vertical and horizontal RRAM array" Physica Scripta (2019).

69. L. Xu, R. Yuan, Z. Zhu, K. Liu, Z. Jing, Y. Cai, Y. Wang, Y. Yang, and R. Huang, "Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications" Advanced Materials Technologies, 1, 1900212 (2019).

68. Q. Chen, M. Lin, Z. Wang, X. Zhao, Y. Cai, Q. Liu, Y. Fang, Y. Yang, M. He, and Ru Huang, "Low Power Parylene‐Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications" Advanced Electronic Materials 5, 1800852 (2019).

67.A. I. Berg, S. Brivio, S. Brown, G. Burr, S. Deswal, J. Deuermeier, E. Gale, H. Hwang, D. Ielmini, G. Indiveri, A. J. Kenyon, A. Kiazadeh, I. Köymen, M. Kozicki, Y. Li, D. Mannion, T. Prodromakis, C. Ricciardi, S. Siegel, M. Speckbacher, I. Valov, W. Wang, R. S. Williams, D. Wouters, and Y. Yang, "Synaptic and neuromorphic functions: general discussion", Faraday discussions 213, 553-578 (2019).

66. M. Lanza, H.‐S. P. Wong, E. Pop, D. Ielmini, D. Strukov, B. C. Regan, L. Larcher, M. A. Villena, J. J. Yang, L. Goux, A. Belmonte, Y. Yang, F. M. Puglisi, J. Kang, B. Magyari‐Köpe, E. Yalon, A. Kenyon, M. Buckwell, A. Mehonic, A. Shluger, H. Li, T.‐H. Hou, B. Hudec, D. Akinwande, R. Ge, S. Ambrogio, J. B. Roldan, E. Miranda, J. Suñe, K. L. Pey, X. Wu, N. Raghavan, E. Wu, W. D. Lu, G. Navarro, W. Zhang, H. Wu, R. Li, A. Holleitner, U. Wurstbauer, M. C. Lemme, M. Liu, S. Long, Q. Liu, H. Lv, A. Padovani, P. Pavan, I. Valov, X. Jing, T. Han, K. Zhu, S. Chen, F. Hui, and Y. Shi, "Recommended methods to study resistive switching devices" Advanced Electronic Materials 5, 1800143 (2019).

2018

65. Y. Ling, Z. Wang, Y. Fang, J. Kang, L. Wu, Y. Yang, Y. Cai, and R. Huang, "RTN impacts on RRAM-based Nonvolatile logic circuit" 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

64. L. Wu, Z. Wang, Y. Fang, Z. Yu, J. Kang, Q. Chen, Y. Yang, Z. Ji, Y. Cai, and R. Huang, "Study on High-Resistance State Instability of TaOx-Based RRAM" 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

63. L. Xu, L. Bao, T. Zhang, K. Yang, Y. Cai, Y. Yang, and R. Huang, "Nonvolatile memristor as a new platform for non-von Neumann computing" 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

62. C. Cheng, Y. Li, T. Zhang, Y. Fang, J. Zhu, K. Liu, L. Xu, Y. Cai, X. Yan, Y. Yang, and R. Huang, "Bipolar to unipolar mode transition and imitation of metaplasticity in oxide based memristors with enhanced ionic conductivity" Journal of Applied Physics 124, 152103 (2018).

61. L. Bao, J. Kang, Y. Fang, Z. Yu, Z. Wang, Y. Yang, Y. Cai, and R. Huang, "Artificial Shape Perception Retina Network Based on Tunable Memristive Neurons" Scientific reports 8, 13727 (2018).

60. Q. Chen, M. Lin, Y. Fang, Z. Wang, Y. Yang, J. Xu, Y. Cai, and R. Huang, " Integration of biocompatible organic resistive memory and photoresistor for wearable image sensing application" Science China Information Sciences 61, 060411 (2018).

59. Y. Fang, Z. Yu, Z. Wang, T. Zhang, Y. Yang, Y. Cai, and R. Huang, "Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer" IEEE Electron Device Letters 39, 819-822 (2018).

58. Y. Yang, and R. Huang, "Probing memristive switching in nanoionic devices" Nature Electronics 1, 274-287 (2018).

57. J. Zhu, Y. Yang, R. Jia, Z. Liang, W. Zhu, Z. Ur Rehman, L. Bao, X. Zhang, Y. Cai, L. Song, and R. Huang, "Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics" Advanced Materials 30, 1800195 (2018).

56. L. Bao, Y. Fang, Z. Wang, J. Kang, Y. Yang, J. Xu, Y. Cai, and R. Huang, "Study on microscopic model of resistive switching in amorphous tantalum pentoxide from first-principle calculations" 2018 China Semiconductor Technology International Conference (CSTIC), 1-3

55. J. Li, T. Zhang, Q. Duan, L. Li, Y. Yang, and R. Huang, "Engineering resistive switching behavior in TaOx based memristive devices for non-von Neuman computing applications" Semiconductor Technology International Conference (CSTIC), 2018 China, 1-3

54. Q. Duan, L. Xu, J. Zhu, X. Sun, Y. Yang, and R. Huang, "Resistive switching and synaptic plasticity in HfO2-based memristors with single-layer and bilayer structures" 2018 China Semiconductor Technology International Conference (CSTIC), 1-3

53. C. Wang, H. Wu, B. Gao, T. Zhang, Y. Yang, and H. Qian, "Conduction mechanisms, dynamics and stability in ReRAMs" Microelectronic Engineering 187, 121-133 (2018).

2017

52. J. Kang, Z. Yu, L. Wu, Y. Fang, Z. Wang, Y. Cai, Z. Ji, J. Zhang, R. Wang, Y. Yang, and R. Huang, "Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition" 2017 IEEE International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4

51. Y. Yang, Y. Takahashi, A. Tsurumaki-Fukuchi, M. Arita, M. Moors, M. Buckwell, A. Mehonic, A. Kenyon, "Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices" Journal of Electroceramics 39, 73-93 (2017).

50. Y. Yang, "Memristors for Memory and Computing Applications" Information Storage System and Technology, ISu4B. 1 (2017).

49. X. Lv, Y. Cai, Y. Yang, Z. Yu, Y. Fang, Z. Wang, L. Wu, J. Liu, W. Zhang, and R. Huang, "A neural network circuit with associative learning and forgetting process based on memristor neuromorphic device" 2017 IEEE 12th International Conference on ASIC (ASICON), 211-214

48. Q. Duan, T. Zhang, M. Yin, C. Cheng, L. Xu, Y. Yang, and R. Huang, "Switching dynamics and computing applications of memristors: An overview" 2017 IEEE 12th International Conference on ASIC (ASICON), 144-147

47. T. Zhang, M. Yin, C. Xu, X. Lu, X. Sun, Y. Yang, R. Huang, " High-speed true random number generation based on paired memristors for security electronics" Nanotechnology 28, 455202 (2017).

46. M. Lin, Q. Chen, Z. Wang, Y. Fang, J. Liu, Y. Yang, W. Wang, Y. Cai, and R. Huang, "Flexible Polymer Device Based on Parylene-C with Memory and Temperature Sensing Functionalities" Polymers 9, 310 (2017).

45. Y. Yang, M. Yin, Z. Yu, Z. Wang, T. Zhang, Y. Cai, W. Lu, and R. Huang, "Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In‐Memory Boolean Logic" Advanced Electronic Materials 3, 1700032 (2017).

44. Y. Yang, X. Zhang, L. Qin, Q. Zeng, X. Qiu, and R. Huang, "Probing nanoscale oxygen ion motion in memristive systems." Nature communications 8, 15173 (2017).

43. Y. Zhao, C. Wu, Q. Huang, C. Chen, J. Zhu, L. Guo, R. Jia, Z. Lv, Y. Yang, M. Li, and R. Huang, "A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High  Ratio" IEEE Electron Device Letters 38 , 540-543 (2017).

42. T. Zhang, M. Yin, X. Lu, Y. Cai, Y. Yang, and R. Huang, "Tolerance of intrinsic device variation in fuzzy restricted Boltzmann machine network based on memristive nano-synapses" Nano Futures 1, 015003 (2017).

41. J. Li, Q. Duan, T. Zhang, M. Yin, X. Sun, Y. Cai, L. Li, Y. Yang, and R. Huang, "Tuning analog resistive switching and plasticity in bilayer transition metal oxide based memristive synapses" RSC Advances 7, 43132-43140 (2017).

2016

40. M. Yin, Y. Yang, Z. Wang, T. Zhang, Y. Fang, X. Yang, Y. Cai, and R. Huang, "TaOx based memristors with recessed bottom electrodes and built-in ion concentration gradient as electronic synapses"2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

39. Y. Yang, and W. Lu, "Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices" IEEE Transactions on Nanotechnology 15, 465-472 (2016).

38. H. Liu, Q. Hua, R. Yu, Y. Yang, T. Zhang, Y. Zhang, and C. Pan, "A Bamboo‐Like GaN Microwire‐Based Piezotronic Memristor" Advanced Functional Materials 26, 5307-5314 (2016).

37. M. Yu, Y. Fang, Z. Wang, G. Chen, Y. Pan, X. Yang, M. Yin, Y. Yang, M. Li, Y. Cai, and R. Huang, "Encapsulation layer design and scalability in encapsulated vertical 3D RRAM" Nanotechnology 27, 205202 (2016).

36. X. Yang, Y. Fang, Z. Yu, Z. Wang, T. Zhang, M. Yin, M. Lin, Y. Yang, Y. Cai, and R. Huang, "Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device" Nanoscale 8, 18897-18904 (2016).

35. Z. Wang, M. Yin, T. Zhang, Y. Cai, Y. Wang, Y. Yang, and R. Huang, "Engineering incremental resistive switching in TaO x based memristors for brain-inspired computing" Nanoscale 8, 14015-14022 (2016).

2015

34. Y. Yang, B. Chen, and W. Lu, "Memristive Physically Evolving Networks Enabling the Emulation of Heterosynaptic Plasticity" Advanced Materials 27, 7720-7727 (2015).

33. Y. Yang, and W. Lu, "Characterizations and understanding of conducting filaments in resistive switching devices" 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 116-119 (2015).

32. M. Wang, J. Zhou, Y. Yang, S. Gaba, M. Liu, and W. Lu, "Conduction mechanism of a TaO x-based selector and its application in crossbar memory arrays" Nanoscale 7, 4964-4970 (2015),

2014

31. Y. Yang, P. Gao, L. Li, X. Pan, S. Tappertzhofen, S. Choi, R. Waser, I. Valov, and W. D. Lu "Electrochemical dynamics of nanoscale metallic inclusions in dielectrics" Nature communications 5, 4232 (2014).

30. Y. Yang, J. Lee, S. Lee, C. H. Liu, Z. Zhong, and W. Lu, "Oxide Resistive Memory with Functionalized Graphene as Built‐in Selector Element" Advanced Materials 26, 3693-3699 (2014).

29. Y. Yang, T. Chang, and W. Lu, "Memristive Devices: Switching Effects, Modeling, and Applications" Memristors and Memristive Systems, 195-221 (2014).

28. S. Choi, Y. Yang, and W. Lu, "Random telegraph noise and resistance switching analysis of oxide based resistive memory" Nanoscale 6 (1), 400-404 (2014).

2013

27. Y. Yang, S. Choi, and W. Lu, "Oxide heterostructure resistive memory" Nano letters 13, 2908-2915 (2013).

26. T. Chang, Y. Yang, and W. Lu, "Building neuromorphic circuits with memristive devices" IEEE Circuits and Systems Magazine 13, 56-73 (2013).

25. Y. Yang, and W. Lu, "Nanoscale resistive switching devices: mechanisms and modeling" Nanoscale 5, 10076-10092 (2013).

2012

24. W. Lu, S.-H. Jo, Y. Yang, S. Kvatinsky, E. G. Friedman, A. Kolodny, U. C. Weiser, O. Kavehei, S. Skafidas, K. Eshraghian, O. Šuch, M. Klimo, S. Foltán, K. Grondžák, E. Linn, R. Rosezin, S. Tappertzhofen, U. Böttger, R. Waser, M. Becherer, J. Kiermaier, S. Breitkreutz, I. Eichwald, G. Csaba, and D. Schmitt‐Landsiedel, "Nanosession: Logic Devices and Circuit Design" Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany 185-195 (2012).

23. Y. Yang, P. Sheridan, and W. Lu, "Complementary resistive switching in tantalum oxide-based resistive memory devices" Applied Physics Letters 100, 203112 (2012).

22. Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, and W. Lu, "Observation of conducting filament growth in nanoscale resistive memories" Nature communications 3, 732 (2012).

21. F. Pan, J. Luo, Y. Yang, X. Wang, and F. Zeng, "Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO" Science China Technological Sciences 55, 421-436 (2012).

20. S. Gaba, S. Choi, P. Sheridan, T. Chang, Y. Yang, and W. Lu, "Improvement of RRAM device performance through on-chip resistors" MRS Online Proceedings Library Archive 1430 (2012),

2011

19. C. Chen, F. Zeng, J. Li, P. Sheng, J. Luo, Y. Yang, F. Pan, Y. Zou, Y. Huang, and Z. Jiang, "Strong d–d electron interaction inducing ferromagnetism in Mn-doped LiNbO 3" Thin Solid Films 520, 764-768 (2011).

18. F. Zeng, C. Chen, B. Fan, Y. Yang, P. Yang, J. Luo, F. Pan, and W. Yan, "Effect of carbon doping on microstructure, electronic and magnetic properties of Cr: AlN films" Journal of Alloys and Compounds 509, 440-446 (2011).

17. Y. Yang, X. Zhang, M. Gao, F. Zeng, W. Zhou, S. Xie, and F. Pan, "Nonvolatile resistive switching in single crystalline ZnO nanowires" Nanoscale 3, 1917-1921 (2011).

2010

16. Z. Wang, F. Zeng, J. Yang, C. Chen, Y. Yang, and F. Pan, "Reproducible and controllable organic resistive memory based on Al/poly (3, 4-ethylene-dioxythiophene): poly (styrenesulfonate)/Al structure" Applied Physics Letters 97, 271 (2010).

15. P. Feng, C. Chao, Z. Wang, Y. Yang, Y. Jing, and Z, Fei, "Nonvolatile resistive switching memories-characteristics, mechanisms and challenges" Progress in Natural Science: Materials International 20, 1-15 (2010).

14. Y. Yang, B. Fan, F. Zeng, and F. Pan, "Bipolar resistance switching characteristics in TiN/ZnO: Mn/Pt junctions developed for nonvolatile resistive memory application" Journal of nanoscience and nanotechnology 10, 7370-7373 (2010).

13. C. Chen, Y. Yang, F. Zeng, and F, Pan, "Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device" Applied Physics Letters 97, 083502 (2010).

12. J. Luo, Y. Yang, X. Zhu, G. Chen, F. Zeng, and F. Pan, "Enhanced electromechanical response of Fe-doped ZnO films by modulating the chemical state and ionic size of the Fe dopant", Physical Review B 82, 014116 (2010).

11. Y. Yang, C. Chen, F. Zeng, and F. Pan, "Multilevel resistance switching in Cu/TaOx/Pt structures induced by a coupled mechanism", Journal of Applied Physics 107, 093701 (2010).

10.Y. Yang, F. Pan, and F. Zeng, "Bipolar resistance switching in high-performance Cu/ZnO: Mn/Pt nonvolatile memories: active region and influence of Joule heating", New Journal of Physics 12, 023008 (2010).

2009

9. Y. Yang, F. Pan, F. Zeng, and M. Liu, "Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: from carrier trapping/detrapping to electrochemical metallization" Journal of Applied Physics 106, 123705 (2009),

8. Y. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, "Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application" Nano letters 9, 1636-1643 (2009).

2008

7. Y. Yang, C. Zhong, X. Wang, B. He, S. Wei, F. Zeng, and F. Pan, "Room temperature multiferroic behavior of Cr-doped ZnO films" Journal of Applied Physics 104, 064102 (2008).

6. C. Song, C. Wang, Y. Yang, X. Liu, F. Zeng, and F. Pan, "Room temperature ferromagnetism and ferroelectricity in cobalt-doped LiNbO3 film" Applied Physics Letters 92, 262901 (2008).

5. F. Pan, C. Song, X. Liu, Y. Yang, and F. Zeng, "Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films" Materials Science and Engineering: R: Reports 62, 1-35 (2008).

4. Y. Yang, C. Song, X. Wang, F. Zeng, and F. Pan, "Cr-substitution-induced ferroelectric and improved piezoelectric properties of Zn1− xCrxO films", Journal of Applied Physics 103, 074107 (2008).

3. Y. Yang, C. Song, X. Wang, F. Zeng, and F. Pan, "Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films", Applied Physics Letters 92, 012907 (2008).

2007

2. C. Song, Y. Yang, X. Li, X. Liu, F. Zeng, and F. Pan, "Anomalous voltage dependence of tunnel magnetoresistance in (Zn, Co) O-based junction with double barrier", Applied Physics Letters 91, 172109 (2007).

1. Y. Yang, C. Song, F. Zeng, F. Pan, Y. Xie, and T. Liu, "V5+ ionic displacement induced ferroelectric behavior in V-doped ZnO films", Applied physics letters 90, 242903 (2007).

 

Book Chapters

1. Yuchao Yang*, Ke Yang and Ru Huang*, “Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics”, in Handbook of Memristor Networks, Georgios Sirakoulis, Andrew Adamatzky and Leon O. Chua (eds.), Springer, 2018.

2.  Y. Yang, T. Chang and W. Lu, “Memristive Devices: Switching Effects, Modeling, and Applications” in Memristors and Memristive Systems, R. Tetzlaff (ed.), Springer, 2014.

3.  Y. Yang, W. Lu, “Resistive-Random Access Memory Based on Amorphous Films”, in Nonvolatile Memories: Materials, Devices, and Applications, T. Y. Tseng and S. M. Sze (eds.), American Scientific Publishers, 2012.

4.  Y. Ynag,N. Wu,D. Ma,R. Huang,“Brain-inspired computing chip”,《Research on the Development Strategy of Chinese Artificial Intelligence 2.0》,Zhejiang University Press,2018。

 

Keynote and invited Talks

1.  (keynote) “Understanding and Engineering Memristors for Computing Applications”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Athens, Greece, Apr 03 2017.

2.  (Invited) “Brain Inspired Nanoionic Devices and Networks for Efficient Computing”, International Workshop on Future Computing: Memristive Devices and Systems (IWOFC 2018), Shenzhen, China, December 17-18, 2018.

3.  (Invited) “Development Status and Prospects of Brain-inspired Intelligent Chips”, China IC Industry Promotion Conference (China chip conference), Chongqing, China, November 8-9, 2018.

4.  (Invited) “Interfacial redox processes in memristive devices based on valence change and electrochemical metallization”, Faraday Discussions, Aachen, Germany, Oct. 15 - 17, 2018.

5.  (Invited) “Nonvolatile memristor as a new platform for non-von Neumann computing”, International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2018, Qingdao, China, Oct 31- Nov 3, 2018.

6.  (Invited) “Manipulation of ionic transport properties for synaptic elements with rich functionalities”, 2018 International Emergent Memory Symposium (IEMS-2018), Ji’an, Jiangxi, China, Aug. 31 - Sept. 2, 2018.

7.  (Invited) “Research on New Neuromorphic Devices Based on Nanoion Grid Control ", Chinese Vacuum Society 2018 Annual Conference, Changchun, Jilin, China, August 16-19.

8.  (Invited) “Emerging computing hardware for future artificial intelligence”, 2018 Sino-Dutch International High Level Talent Forum, Beijing, China, Jul. 09-14, 2018.

9.  (Invited) “Nanoionics Enabled Devices and Networks for Efficient Computing”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2018, Beijing, China, Jul. 03-05, 2018.

10. (Invited) “Emulation of the human brain by nanodevices at different scales”, CSTIC, Shanghai, China, Mar. 11-12, 2018.

11. (Invited) “Switching Kinetics of Memristors by Nanoscale Characterization and Their Applications in Neuromorphic Computing”, MRS Fall Meeting, Boston, MA, USA, Nov. 27 - 30, 2017.

12. (Invited) “Memristors for Memory and Computing Applications”, The International Photonics and Optoelectronics Meeting (POEM) 2017, Wuhan, China, Nov 3-5, 2017.

13. (Invited) “Memristors for Emerging Memory and Computing Applications”, ASICON 2017, Guiyang, China, Oct. 25-28, 2017.

14. (Invited) “Memristive Devices: Understanding of Filament Growth Dynamics and Computing Applications”, International Symposium of Memory Devices for Abundant Data Computing, Hongkong, Sept. 22 - 24, 2017.

15. (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, International Workshop on Future Computing: Memristive Devices and Systems (IWOFC 2017), Beijing, China, September 1 - 2, 2017

16. (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, The XXVI International Materials Research Congress (IMRC 2017), Cancun, Mexico, August 20 - 25, 2017

17. (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, 3rd NANOMXCN: Mexico-China Workshop on Nano Materials/Science/Technology, Cancun, Mexico, August 19 - 21, 2017

18. (Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017

19. (Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017

20. (Invited) “Ion Transport in Memristive Oxides and Its Computing Applications”, China RRAM, Soochow, China, Jun. 12 - 13, 2017.

21. (Invited) “Resistive switching dynamics and beyond”, ICSICT, Hangzhou, China, Oct 28 2016.

22. (Invited) “Memristive devices for brain inspired computing”, Workshop on Neuromorphic Devices and Computing Applications, Nanjing University, China, Jul 06 2016.

23. (Invited) “Probing switching mechanism and dynamics of memristive devices”, Workshop on Memristor Theory, Device and Applications, HUST, Wuhan, China, Dec 17 2015.

24. (Invited) “In situ TEM study on electrochemical dynamics in resistive random access memory”, 15th International Conference on Nanotechnology (IEEE Nano 2015), Rome, Italy, Jul 2015.

25. (Invited) “Metal–Insulator Transition in Functionalized Graphene for Select Element of Resistive Memory”, MRS Spring meeting, San Francisco, CA, Apr 2014.

26. (Invited) “RRAM filament structure and growth dynamics”, CSTIC 2014, Shanghai, China, Mar 2014.

27. (Invited) “Brain-inspired Neuromorphic Devices and Networks”, The 2018 Academic Work Annual Meeting of the Chemical and Materials Branch of the Youth Innovation Promotion Association of the Chinese Academy of Sciences and the Second International Youth Forum on Energy Chemistry and Materials, April 27, 2018, Ningbo.

28. (Invited) “Memristive neuromorphic device”, 2018 “Brain and Brain-Inspired Computing Frontiers”STARS Conference, Xishuangbanna, China, April 6 - 9, 2018.

29. (keynote) “Memristive Devices for Brain Inspired Computing”, The 2nd Youth Nano Forum 2017, October 30, 2017, Beijing.

 

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